4奈米大戰，三星搶先用EUV，擁抱GAAFET
Date: 2017-12-05
News Type:
Android Authority報導，製程不斷微縮，傳統微影技術來到極限，無法解決更精密的曝光顯示需求，必須改用波長更短的EUV，才能準確刻蝕電路圖.5奈米以下製程，EUV是必 備用具。三星明年生產7奈米時，就會率先採用EUV，這有如讓三星在6奈米以下的競賽搶先起跑，可望加快發展速度。
製程微縮除了需擁抱EUV，也需開發FinFET技術接班人，不少人認為「閘極全環場效晶體管」（Gate-all-around FET，GAAFET）是最佳解決方案。今年稍早，三星， 格羅方德和IBM攜手，發布全球首見的5奈米晶圓技術，採用EUV和GAAFET技術。三星路徑圖也估計，FinFET難以在5奈米之後使用，4奈米將採用GAAFET。儘管晶 圓代工研發不易，容易遇上挫折延誤，不過目前看來三星進度最快。該公司的展望顯示，計劃最快在2020年生產4奈米。（新聞來源：Money DJ）
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